ST Spot Series
Model Manufacturer Package Number Describe PDF RoHS Inquire
SGT65R65AL STMicroelectronics Ecopack2 2180
650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
SCTW40N120G2VAG STMicroelectronics HIP247 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
SCT040W120G3-4 STMicroelectronics HiP247-4 2180
Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCT055H65G3-7 STMicroelectronics H2PAK-7 2180
Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
SCT040W120G3-4AG STMicroelectronics HiP247-4 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCTHS200N120G3AG STMicroelectronics STPAK 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package
SCT070HU120G3AG STMicroelectronics HU3PAK 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
SCTWA40N12G24AG STMicroelectronics HiP247-4 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
SCTWA60N120G2AG STMicroelectronics HIP247 long leads 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads pac
SCTW40N120G2V STMicroelectronics HIP247 2180
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTW100N120G2AG STMicroelectronics HIP247 2180
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 pa
SCT20N120 STMicroelectronics HIP247 2180
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AG STMicroelectronics HIP247 2180
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
SCT20N120H STMicroelectronics H2PAK-2 2180
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCT055HU65G3AG STMicroelectronics HU3PAK 1982
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
SCTWA35N65G2V STMicroelectronics HIP247 long leads 1982
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
SCT070W120G3-4 STMicroelectronics HiP247-4 1982
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT027W65G3-4AG STMicroelectronics HiP247-4 1982
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
SCT070W120G3-4AG STMicroelectronics HiP247-4 1982
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT040W120G3AG STMicroelectronics HIP247 1982
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
SCTHS300N75G3AG STMicroelectronics STPAK 1982
Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
SCTWA60N12G2-4AG STMicroelectronics HiP247-4 1982
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
SCTWA40N120G2V-4 STMicroelectronics HiP247-4 1982
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
SCTH70N120G2V-7 STMicroelectronics H2PAK-7 1982
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
SCT1000N170AG STMicroelectronics HIP247 1982
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SCT50N120 STMicroelectronics HIP247 1982
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
SCTH35N65G2V-7 STMicroelectronics H2PAK-7 1982
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
SCTWA30N120 STMicroelectronics HIP247 long leads 1982
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCTW90N65G2V STMicroelectronics HIP247 1280
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
SCT018H65G3-7 STMicroelectronics H2PAK-7 1280
Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
SCT027H65G3AG STMicroelectronics H2PAK-7 1280
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
SCT025W120G3-4AG STMicroelectronics HiP247-4 1280
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
SCT018H65G3AG STMicroelectronics H2PAK-7 1280
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
SCT020H120G3AG STMicroelectronics H2PAK-7 1280
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
SCT040H65G3AG STMicroelectronics H2PAK-7 1280
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
SCTW60N120G2 STMicroelectronics HIP247 1280
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
SCTWA90N65G2V-4 STMicroelectronics HiP247-4 1280
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
SCT20N170AG STMicroelectronics HIP247 1280
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package
SCT10N120AG STMicroelectronics HIP247 1280
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247
SCT30N120 STMicroelectronics HIP247 1280
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
SCT20N120AG STMicroelectronics HIP247 1280
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247
SCTW35N65G2V STMicroelectronics HIP247 1276
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
SCT070W120G3AG STMicroelectronics HIP247 1276
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package
SCT040H65G3-7 STMicroelectronics H2PAK-7 1276
Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
SCTHS250N65G2G STMicroelectronics STPAK 1276
Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package
SCT040H120G3AG STMicroelectronics H2PAK-7 1276
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
SCT012H90G3AG STMicroelectronics H2PAK-7 1276
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
SCT040H65G3SAG STMicroelectronics H2PAK-7 straight leads 1276
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads
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