Broad bandgap transistor_ST agent_ST Level 1 Agent_ST original factory channels_STMicroelectronics_ST spot agent

ST Spot Series

Amplifiers and Comparators
- Current/Voltage/Power/Monitors
- Comparer
- Current detection
- Power operational amplifier
- Video amplifier
- Operational amplifier
Audio ICs
- MEMS audio sensor
- Sound Terminal
- Audio Processor
- Audio amplifier
Automotive ADAS Devices
- Car radar transceiver
Automotive Analog and Power
- Led driver
- Door module driver
- Car comparator
- Automotive operational amplifier
- Chassis and Safety IC
- Motor driver IC
- Power Management and System Fundamentals IC
- Multi output driver IC
- Valve driver IC
- High/low side drivers/switches
- Car current detection
- Automotive power discrete components
- Automotive communication transceiver
- Special dedicated functions
- Linear regulator
- Powertrain IC for ICE/HEV/EV
Automotive Infotainment and Telematics
- GNSS IC
- SoC
- Car audio processor
- Automotive audio power amplifier
- Radio Receiver
- Remote communication and connection processor
Automotive Logic ICs
- Trigger/Register
- Buffer/Driver
- Counter/Encoder/Decoder
- Grid
Automotive Microcontrollers
- STM32 bit Arm Cortex MCU
- STM32 Arm Cortex MPU
- STM8 8位MCU
Clocks and Timers
- Timer
- Real time clock (RTC) IC
Data Converters
- Isolation ADC
- Meter IC
- Analog-to-digital converter
Digital set-top box IC
- UHD
- Demodulators and Tuners
Diodes and Rectifiers
- Field effect rectifier
- Ultra high speed rectifier
- Automotive grade diode
- Bridge diode
- Silicon carbide diode
- Schottky barrier diode
Imaging and Photonics Solutions
- Ambient Light Sensor
- Distance Sensor
- Mobile imaging sensor
- Image Signal Processor (ISP)
Interfaces Transceivers
- IO expanders and level converters
- IO link transceiver
- RS-232
- RS-422 RS-423
- USB
- Darlington array
- Power line transceiver
- Isolation interface
- Smart card interface
Memories
- NVRAM
- Standard Serial Page EEPROM
- EEPROM
MEMS and Sensors
- iNEMO
- MEMS Microphone
- COMPASS
- Infrared sensor
- Accelerometer
- Proximity sensor
- Automotive sensors
- Gyroscope
- Temperature sensor
- Pressure sensor
Microcontrollers Microprocessors
- STM32 ARM Cortex 32-bit microcontroller
- STM32 Arm Cortex MPU
- STM8 8-bit MCU
Motor Drivers
- Stepping motor driver
- Brushless DC motor driver
- Brushed DC motor driver
- Gate driver
NFC
- ST25 NFC/RFID tags and card readers
- Safety NFC
Positioning
- GNSS IC
- GNSS module
Power Management
- Led driver
- LNB power supply
- High capacity power driver
- Gallium nitride (GaN) power supply IC
- Battery Management IC
- Voltage reference
- Photovoltaic IC
- AC-DC converter
- Energy harvesting and solar charging IC
- Hot swappable power management
- Wireless charging IC
- Display power supply and controller
- Linear regulator
- Ethernet powered IC
- Gate driver
- Lighting IC
- DC to DC switching converter
- Intelligent power switch
Power Modules and IPM
- STPOWER ACEPACK module
- STPOWER SLLIMM intelligent module
Power Transistors
- IGBT
- Power MOSFET
- Power bipolar device
- Broad bandgap transistor
Protection and EMI filter
- EMI filters and application specific integrated products (ASIP)
- ESD Protection
- Semiconductor discharge tubes (TSS)
- Transient Voltage Suppressor (TVS)
Radio Frequency Transistors
- STPOWER RF DMOS transistor
- STPOWER RF LDMOS transistor
Resetand Supervisor ICs
- Voltage protection IC
- Reset and voltage monitor
- Switch controller
- Watchdog timing generator
- Microprocessor voltage monitor
- Intelligent reset IC
Secure MCUs
- SIM and eSIM
- Safety NFCA
- Safe wearable solutions
- Security Hardware Platform
- Ensuring Automotive Safety
- Authentication
- Banking, identity recognition, and transportation
Silicon carbide (SiC) devices
- Silicon carbide (SiC) MOSFET
- Silicon carbide (SiC) diode
Space Products
- LEO radiation resistant IC
- Aerospace- Logic IC
- Radiation resistant discrete devices
- Anti radiation power management
- Anti radiation interface
- Anti radiation simulation IC
- Anti irradiation ASIC platform
Switch and Multiplexer
- Ultrasonic pulse generator IC and HV multiplexer
- Power switch with USB charging controller
- Power load switch
- Analog switch/multiplexer
- Data/Signal Switch
Thyristors (SCR) and AC switches
- AC switch
- Thyristor (SCR)
- Thyristor specific devices
- Triac
Touch and Display Controllers
- Touch screen controller
Wireless Connectivity
- Short distance wireless transmission
- RF Solution
- RF front-end
- Long distance wireless transmission

Model	Manufacturer	Package	Number	Describe
SCTH40N120G2V-7	STMicroelectronics	H2PAK-7	1276	Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
SCTL35N65G2V	STMicroelectronics	PowerFLAT 8x8 HV	1276	Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
SCTW70N120G2V	STMicroelectronics	HIP247	1276	Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
SCTW100N65G2AG	STMicroelectronics	HIP247	1276	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
SCTWA50N120	STMicroelectronics	HIP247 long leads	1276	Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCTH35N65G2V-7AG	STMicroelectronics	H2PAK-7	1276	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 pa
SCT10N120	STMicroelectronics	HIP247	1276	Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCTWA90N65G2V	STMicroelectronics	HIP247 long leads	1580	Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
SCT020W120G3-4AG	STMicroelectronics	HiP247-4	1580	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
SCT040H120G3-7	STMicroelectronics	H2PAK-7	1580	Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
SCT015W120G3-4AG	STMicroelectronics	HiP247-4	1580	Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCTH100N120G2-AG	STMicroelectronics	H2PAK-7	1580	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 p
SCTHS250N65G3AG	STMicroelectronics	STPAK	1580	Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package
SGT120R65AL	STMicroelectronics	Ecopack2	1580	650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
SCTH60N120G2-7	STMicroelectronics	H2PAK-7	1580	Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
SCTWA35N65G2V-4	STMicroelectronics	HiP247-4	1580	Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
SCTW60N120G2AG	STMicroelectronics	HIP247	1580	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
SCTH35N65G2V-7	STMicroelectronics	H2PAK-7	1580	Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
SCTW100N120G2AG	STMicroelectronics	HIP247	1580	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 pa
SCT20N120	STMicroelectronics	HIP247	1580	Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTH100N65G2-7AG	STMicroelectronics	H2PAK-7	1580	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
SCTWA60N120G2-4	STMicroelectronics	HiP247-4	4384	Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
SCTW35N65G2VAG	STMicroelectronics	HIP247	4384	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
SCT070H120G3-7	STMicroelectronics	H2PAK-7	4384	Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
SCT055H65G3AG	STMicroelectronics	H2PAK-7	4384	Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
SCT025H120G3AG	STMicroelectronics	H2PAK-7	4384	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
SCT012W90G3AG	STMicroelectronics	HIP247	4384	Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
SCT011H75G3AG	STMicroelectronics	H2PAK-7	4384	Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package
SCTWA70N120G2V-4	STMicroelectronics	HiP247-4	4384	Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
SCTL90N65G2V	STMicroelectronics	PowerFLAT 8x8 HV	4384	Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
SCT1000N170	STMicroelectronics	HIP247	4384	Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SCT30N120	STMicroelectronics	HIP247	4384	Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
SCT1000N170AG	STMicroelectronics	HIP247	4384	Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SCT50N120	STMicroelectronics	HIP247	4384	Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
SCTWA20N120	STMicroelectronics	HIP247 long leads	4384	Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads packa
SCT040HU65G3AG	STMicroelectronics	HU3PAK	10000	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package
SCTH90N65G2V-7	STMicroelectronics	H2PAK-7	10000	Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 ??C) in an H2PAK-7 package
SCT040W120G3	STMicroelectronics	HIP247	10000	Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
SCT055W65G3-4AG	STMicroelectronics	HiP247-4	10000	Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
SCT060HU75G3AG	STMicroelectronics	HU3PAK	10000	Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package
SCTWA70N120G2V	STMicroelectronics	HIP247 long leads	10000	Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
SCT070H120G3AG	STMicroelectronics	H2PAK-7	10000	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
SCTWA40N120G2V	STMicroelectronics	HIP247 long leads	10000	Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTWA40N120G2AG	STMicroelectronics	HIP247 long leads	10000	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads pac
SCT30N120H	STMicroelectronics	H2PAK-2	10000	Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
SCTWA50N120	STMicroelectronics	HIP247 long leads	10000	Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
SCTH35N65G2V-7AG	STMicroelectronics	H2PAK-7	10000	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 pa
SCT10N120AG	STMicroelectronics	HIP247	10000	Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247

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