Amplifiers and Comparators
Audio ICs
Automotive ADAS Devices
Automotive ADAS Devices
Automotive Analog and Power
Automotive Analog and Power
Automotive Infotainment and Telematics
Automotive Infotainment and Telematics
Automotive Logic ICs
Automotive Logic ICs
Automotive Microcontrollers
Automotive Microcontrollers
Clocks and Timers
Clocks and Timers
Data Converters
Data Converters
Digital set-top box IC
Digital set-top box IC
Diodes and Rectifiers
Imaging and Photonics Solutions
Imaging and Photonics Solutions
Interfaces Transceivers
Memories
MEMS and Sensors
Microcontrollers Microprocessors
Microcontrollers Microprocessors
Motor Drivers
NFC
Positioning
Positioning
Power Management
Power Management
Power Modules and IPM
Power Modules and IPM
Power Transistors
Power Transistors
Protection and EMI filter
Radio Frequency Transistors
Radio Frequency Transistors
Resetand Supervisor ICs
Secure MCUs
Silicon carbide (SiC) devices
Silicon carbide (SiC) devices
Space Products
Switch and Multiplexer
Thyristors (SCR) and AC switches
Thyristors (SCR) and AC switches
Touch and Display Controllers
Touch and Display Controllers
Wireless Connectivity
Model | Manufacturer | Package | Number | Describe | RoHS | Inquire | |
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SGT65R65AL | STMicroelectronics | Ecopack2 | 2180 |
650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor |
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SCTW40N120G2VAG | STMicroelectronics | HIP247 | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package |
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SCT040W120G3-4 | STMicroelectronics | HiP247-4 | 2180 |
Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package |
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SCT055H65G3-7 | STMicroelectronics | H2PAK-7 | 2180 |
Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package |
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SCT040W120G3-4AG | STMicroelectronics | HiP247-4 | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package |
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SCTHS200N120G3AG | STMicroelectronics | STPAK | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package |
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SCT070HU120G3AG | STMicroelectronics | HU3PAK | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package |
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SCTWA40N12G24AG | STMicroelectronics | HiP247-4 | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package |
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SCTWA60N120G2AG | STMicroelectronics | HIP247 long leads | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads pac |
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SCTW40N120G2V | STMicroelectronics | HIP247 | 2180 |
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package |
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SCTW100N120G2AG | STMicroelectronics | HIP247 | 2180 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 pa |
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SCT20N120 | STMicroelectronics | HIP247 | 2180 |
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package |
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SCTW100N65G2AG | STMicroelectronics | HIP247 | 2180 |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package |
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SCT20N120H | STMicroelectronics | H2PAK-2 | 2180 |
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package |
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SCT055HU65G3AG | STMicroelectronics | HU3PAK | 1982 |
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package |
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SCTWA35N65G2V | STMicroelectronics | HIP247 long leads | 1982 |
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package |
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SCT070W120G3-4 | STMicroelectronics | HiP247-4 | 1982 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package |
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SCT027W65G3-4AG | STMicroelectronics | HiP247-4 | 1982 |
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package |
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SCT070W120G3-4AG | STMicroelectronics | HiP247-4 | 1982 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package |
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SCT040W120G3AG | STMicroelectronics | HIP247 | 1982 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package |
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SCTHS300N75G3AG | STMicroelectronics | STPAK | 1982 |
Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package |
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SCTWA60N12G2-4AG | STMicroelectronics | HiP247-4 | 1982 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package |
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SCTWA40N120G2V-4 | STMicroelectronics | HiP247-4 | 1982 |
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package |
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SCTH70N120G2V-7 | STMicroelectronics | H2PAK-7 | 1982 |
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package |
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SCT1000N170AG | STMicroelectronics | HIP247 | 1982 |
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package |
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SCT50N120 | STMicroelectronics | HIP247 | 1982 |
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package |
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SCTH35N65G2V-7 | STMicroelectronics | H2PAK-7 | 1982 |
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package |
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SCTWA30N120 | STMicroelectronics | HIP247 long leads | 1982 |
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package |
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SCTW90N65G2V | STMicroelectronics | HIP247 | 1280 |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package |
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SCT018H65G3-7 | STMicroelectronics | H2PAK-7 | 1280 |
Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package |
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SCT027H65G3AG | STMicroelectronics | H2PAK-7 | 1280 |
Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package |
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SCT025W120G3-4AG | STMicroelectronics | HiP247-4 | 1280 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package |
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SCT018H65G3AG | STMicroelectronics | H2PAK-7 | 1280 |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package |
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SCT020H120G3AG | STMicroelectronics | H2PAK-7 | 1280 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package |
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SCT040H65G3AG | STMicroelectronics | H2PAK-7 | 1280 |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package |
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SCTW60N120G2 | STMicroelectronics | HIP247 | 1280 |
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package |
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SCTWA90N65G2V-4 | STMicroelectronics | HiP247-4 | 1280 |
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package |
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SCT20N170AG | STMicroelectronics | HIP247 | 1280 |
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package |
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SCT10N120AG | STMicroelectronics | HIP247 | 1280 |
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 |
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SCT30N120 | STMicroelectronics | HIP247 | 1280 |
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package |
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SCT20N120AG | STMicroelectronics | HIP247 | 1280 |
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 |
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SCTW35N65G2V | STMicroelectronics | HIP247 | 1276 |
Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package |
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SCT070W120G3AG | STMicroelectronics | HIP247 | 1276 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package |
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SCT040H65G3-7 | STMicroelectronics | H2PAK-7 | 1276 |
Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package |
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SCTHS250N65G2G | STMicroelectronics | STPAK | 1276 |
Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package |
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SCT040H120G3AG | STMicroelectronics | H2PAK-7 | 1276 |
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package |
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SCT012H90G3AG | STMicroelectronics | H2PAK-7 | 1276 |
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package |
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SCT040H65G3SAG | STMicroelectronics | H2PAK-7 straight leads | 1276 |
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads |
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